10 Oxide semiconductors 11 Manganese- and iron -doped indium oxide, ferromagnetic at room temperature Zinc oxide Magnesium oxide : p-type transparent MgO films with cation vacancies, 14 15 combining ferromagnetism and multilevel switching ( memristor ) Titanium dioxide : Tin dioxide Manganese-doped tin dioxide, with. Zhou., Phys. In this paper we review a number of TM-doped ZnO-based DMS in order to clarify which materials are likely ferromagnetic. Permanent magnetization has been observed in a wide range of semiconductor based materials. "Ferromagnetism in defect-ridden oxides and related materials". I.; Balcells,.; Konstantinovi,.; Valencia,.; Schmitz,.; Arbiol,.; Estrade,.; Cornil,. 16 17 Europium oxide, with a Curie temperature of 69K.
Cabot, Andreu; Puntes, Victor.; Shevchenko, Elena; Yin, Yadong; Balcells, Llus; Marcus, Matthew.; Hughes, Steven.; Alivisatos,. CrossRef Google Scholar TMS 2009). Katayama-Yoshida, Physica B, 308310 (2001. Fukumura., Appl. New Journal of Physics. Ramachandran., Appl. Some of them exhibit a clear correlation between carrier concentration and magnetization, including the work. Doi :.1088/1367-2630/12/5/053025.CS1 maint: Multiple names: authors list ( link ) Story,.; Gaazka,.; Frankel,.; Wolff,. These keywords were added by machine and not by the authors. This would theoretically provide near-total spin polarization (as opposed to iron and other metals, which provide only 50 polarization which is an important property for spintronics applications,.g. Jung., Appl. However, if the hole concentration is high ( 1020 cm3 then the Curie temperature would be higher, between 100200.
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